Doping in III-V semiconductors, Edition: Digitally printed by E Fred Schubert

By E Fred Schubert

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Bevacqua S. , Bielan C. , Carranti F. , Hess B. , and Lubowski S. J. “Electrical properties of Ga(AsP) p-n junctions” Proc. IEEE 51, 364 (1963a) Holonyak Jr. , Bevacqua S. , Bielan C. , and Lubowski S. J. “The “direct–indirect” transition in Ga(As1–xPx) p-n junctions” Appl. Phys. Lett. 3, 47 (1963b) Holonyak Jr. , Nuese C. , Sirkis M. , and Stillman G. E. “Effect of donor impurities on the direct– 23 1 History of light-emitting diodes indirect transition in Ga(AsP)” Appl. Phys. Lett. -H. -P. , Kaneko K.

GaN electroluminescent diodes” RCA Review 32, 383 (1971b) Pankove J. , Miller E. , and Berkeyheiser J. E. “GaN blue light-emitting diodes” J. Luminescence 5, 84 (1972) Pankove J. I. and Lampert M. A. “Model for electroluminescence in GaN” Phys. Rev. Lett. 33, 361 (1974) Perry T. S. “M. George Craford” IEEE Spectrum, February issue, p. 52 (1995) Pilkuhn M. H. and Rupprecht H. “Light emission from GaAsxP1–x diodes” Trans. Metallurgical Soc. AIME 230, 282 (1964) Pilkuhn M. H. and Rupprecht H. “Electroluminescence and lasing action in GaAsxP1–x” J.

Phys. Lett. 1, 91 (1962) Rostky G. html, Issue 944, March 10 (1997) Round H. J. , and Woodall J. M. “Continuous stimulated emission from GaAs diodes at 77 K” (First report of 77 K cw laser) Proc. , Woodall J. , and Pettit D. G. “Efficient electro-luminescence from GaAs diodes at 300 K” Appl. Phys. Lett. , Woodall J. , and Pettit G. D. “Efficient visible electroluminescence at 300 K from AlGaAs pn junctions grown by liquid phase epitaxy” Appl. Phys. Lett. 11, 81 (1967). , Woodall J. , Pettit G. , Crowe J.

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