By John L. B. Walker
Even if you're an RF transistor fashion designer, an amplifier dressmaker or a procedure clothier, this is often your one-stop consultant to RF and microwave transistor strength amplifiers. A crew of specialist authors brings you on top of things on each subject, together with: units (Si LDMOS and VDMOS, GaAs FETs, GaN HEMTs), circuit and amplifier layout (discrete, hybrid and monolithic), CAD, thermal layout, reliability, and procedure applications/requirements for RF and microwave transistor amplifiers. protecting cutting-edge advancements and emphasising sensible communications functions, this is often the whole specialist reference at the topic.
Read or Download Handbook of RF and Microwave Power Amplifiers (The Cambridge RF and Microwave Engineering Series) PDF
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Additional info for Handbook of RF and Microwave Power Amplifiers (The Cambridge RF and Microwave Engineering Series)
The heat in a DMOS transistor is generated within the primary parasitic resistance of the device: the n-drift region. 1) there is an array of drain regions which are all generating heat during operation. From each of these regions the heat will fan out laterally as it moves towards the backside of the wafer. It is therefore a very good approximation to use the total active tub area as the cross-sectional area driving thermal resistance. There are exceptions to this such as when a device is quite small and the edge effects begin to become a large 34 Silicon LDMOS and VDMOS transistors contributor to the overall thermal resistance cross-section, but for large transistors the approximation is valid.
In the BVDSS discussion the concept of RESURF was used to illustrate that there are two electric field peaks within the n-drift region of an LDMOS device. The electric field peak at the drain edge of the gate is the one which results in HCI if it gets too strong. Under normal transistor operation, electrons are flowing across the channel with the aid of a lateral electric field. As with avalanche breakdown, the field can become strong enough that the electrons are accelerated to a point where collisions with other electron-hole pairs or the silicon lattice occur.
HCI in MOSFET transistors must be considered with respect to the impact it will have in RF PA applications. HCI is the third major consideration (the other two being BVDSS and RDSon ). There are a variety of metrics available to characterize HCI, including threshold voltage shift, transconductance degradation, etc. The two critical parameters impacted by HCI for RF power devices are shifts in RDSon and bias current (commonly referred to as IDQ ). For a thorough understanding of these effects a discussion of the device physics involved is required.