Non-Stoichiometry in Semiconductors by K.J. Bachmann, H.-L. Hwang and C. Schwab (Eds.)

By K.J. Bachmann, H.-L. Hwang and C. Schwab (Eds.)

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Non-stoichiometry of MBE grown epitaxial layers has been found to depend on growth conditions. The XFR method has also been successfully applied to the direct analysis of lattice location of doped impurities and microscopic strain around them for Al, In, Zn, Si and C. In the case of MBE growth on (100) and (lll)B substrates, most doped Si atoms occupy Ga sites even at heavy doping concentrations up to [Si] 10 c m ~ , and carrier saturation is due to S i g complexes. Further, occupation sites of Si depend on the substrate orientation and growth on a vicinal surface of (lll)A results in a drastic change in conduction type.

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