Point Defects in Semiconductors and Insulators: by Professor Dr. Johann-Martin Spaeth, Professor Dr. Harald

By Professor Dr. Johann-Martin Spaeth, Professor Dr. Harald Overhof (auth.)

This ebook introduces the foundations and methods of recent electron paramagnetic resonance (EPR) spectroscopy which are crucial for purposes used to figure out microscopic illness buildings. many various magnetic resonance tools are required for investigating the microscopic and digital houses of solids and uncovering correlations among these homes. as well as EPR such tools comprise electron nuclear double resonance (ENDOR), electronically and optically detected EPR (the latter is called ODENDOR), and electronically and optically detected ENDOR. This publication comprehensively discusses experimental, technological, and theoretical elements of those concepts from a pragmatic viewpoint with many illustrative examples taken from semiconductors and insulators. The non-specialist is educated concerning the strength of different tools. A researcher reveals sensible assist in the applying of business equipment in addition to priceless tips from ab initio conception for the duty of deriving constitution versions from experimental data.

Show description

Read Online or Download Point Defects in Semiconductors and Insulators: Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions PDF

Best semiconductors books

Fabless Semiconductor Implementation

Notice tips to release and prevail as a Fabless Semiconductor enterprise Fabless Semiconductor Implementation takes you step by step throughout the demanding situations confronted by way of fabless enterprises within the improvement of built-in circuits. This professional consultant examines the capability pitfalls of IC implementation within the quickly growing to be fabless phase of the semiconductor and elaborates how you can triumph over those problems.

CMOS Analog Design Using All-Region MOSFET Modeling

Masking the necessities of analog circuit layout, this publication takes a distinct layout procedure in keeping with a MOSFET version legitimate for all working areas, instead of the normal square-law version. beginning chapters concentrate on gadget modeling, built-in circuit expertise, and structure, when later chapters cross directly to hide noise and mismatch, and research and layout of the fundamental development blocks of analog circuits, similar to present mirrors, voltage references, voltage amplifiers, and operational amplifiers.

Advances in Amorphous Semiconductors (Advances in Condensed Matter Science)

Amorphous fabrics fluctuate considerably from their crystalline opposite numbers in numerous ways in which create designated concerns of their use. This e-book explores those matters and their implications, and gives a whole therapy of either experimental and theoretical experiences within the box. Advances in Amorphous Semiconductors covers a variety of reviews on hydrogenated amorphous silicon, amorphous chalcogenides, and a few oxide glasses.

Extra resources for Point Defects in Semiconductors and Insulators: Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions

Sample text

Most EPR lines of solid state defects are rather broad. Often LlWI/2 is of the order of 5-50 mT. This limits the sensitivity more than anything else, since most spectrometers reach the theoretical sensitivity quite well. The "spectrometer sensitivity" is mostly given in terms of Nmin/ LlWl~2. A typical sensitivity for electron spin resonance is Nmin = 5 x 1011 -1 X 101 spins/mT for T = 300 K, S = 1/2, 110 = 10 GHz, Llll = 1 Hz. In NMR the sensitivity is much smaller. For protons one obtains about 10 18 _10 19 spins/mT for Wo = 40 MHz, T = 300 K, I = 1/2, and Llll = 1Hz.

The polarization B1 of the rf field must always be perpendicular to B o. lt can, of course, also be parallel to the y-direction, since the same result is obtained as for the x-direction. If both levels, ms = +1/2 and ms = _1/2, had the same occupation N+ = N_ (Fig. 46) for absorption and induced emission are equal. The probability for spontaneous emission is very small and can be neglected here. Therefore, an energy transfer is only possible if the occupation numbers satisfy N+ < N_. This is indicated in Fig.

A) Bo II [100j. (b) Bo II [110j. There is no fine-structure splitting observable. The partly resolved structure for Bo II < 100> is due to superhyperfine interactions with four equivalent nearest 31p neighbors. LB)' In this case, one cannot easily determine the spin state of a defect, and thus its charge state, from the EPR spectra. 13]. NiH occupies a Ga site and has the configuration 3d7 . There is no resolved fine-structure splitting, and the spectrum looks as if arising from an S = 1/2 defect.

Download PDF sample

Rated 4.63 of 5 – based on 24 votes