Properties of III-V Quantum Wells and Superlattices (E M I S by Pallab Bhattacharya

By Pallab Bhattacharya

The characterization and accurately managed development of atomic-scale mutilayers were the topic of extensive R&D around the globe.

Nanometric constructions in response to III-V semiconductors have attracted specific realization. considering the fact that 1970, round 15,000 papers were released in all, of which 10,000 have seemed within the final 6 years. The ensuing enhanced fabrics regulate is allowing engineers to accomplish significant advancements within the functionality of microelectronic and optoelectronic units equivalent to QW lasers, tunnelling units, modulators, switches and photodetectors.

In this booklet, the massive quantity of study effects that have accrued is evaluated and distilled all the way down to an invaluable, doable focus of up to date wisdom for digital engineers and solid-state physicists. This has been performed by way of an invited overseas staff of over 50 experts lower than the editorship of Professor Bhattacharya with help from INSPEC, who additionally compiled the topic index. There are forty individually-written, self-contained modules ('Datareviews'), each one especially commissioned to slot right into a pre-determined constitution. matters reviewed extensive contain ancient viewpoint, conception, epitaxial development and doping, constitution (e.g. X-ray diffraction), digital houses, optical homes, modulation doping and units. each one Datareview contains tables, textual content, figures and professional counsel to the literature, as applicable.

Properties of III-V quantum wells and superlattices is meant either as a look-up resource of evaluated information and as a finely-structured state of the art evaluate for educational and business R&D workers.

Also available:

Properties of Lattice-Matched and Strained Indium Gallium Arsenide - ISBN 9780863416620
Properties of Silicon Carbide - ISBN 9780852968703

The establishment of Engineering and expertise is without doubt one of the world's best specialist societies for the engineering and expertise neighborhood. The IET publishes greater than a hundred new titles each year; a wealthy mixture of books, journals and magazines with a again catalogue of greater than 350 books in 18 varied topic components together with:

-Power & Energy
-Renewable Energy
-Radar, Sonar & Navigation
-Electrical Measurement
-History of Technology
-Technology Management

Show description

Read or Download Properties of III-V Quantum Wells and Superlattices (E M I S Datareviews Series) PDF

Similar semiconductors books

Fabless Semiconductor Implementation

Notice tips to release and be triumphant as a Fabless Semiconductor enterprise Fabless Semiconductor Implementation takes you step by step throughout the demanding situations confronted by way of fabless companies within the improvement of built-in circuits. This specialist consultant examines the aptitude pitfalls of IC implementation within the quickly transforming into fabless phase of the semiconductor and elaborates the right way to conquer those problems.

CMOS Analog Design Using All-Region MOSFET Modeling

Protecting the necessities of analog circuit layout, this e-book takes a distinct layout procedure in keeping with a MOSFET version legitimate for all working areas, instead of the traditional square-law version. commencing chapters specialise in machine modeling, built-in circuit expertise, and format, while later chapters move directly to disguise noise and mismatch, and research and layout of the fundamental construction blocks of analog circuits, equivalent to present mirrors, voltage references, voltage amplifiers, and operational amplifiers.

Advances in Amorphous Semiconductors (Advances in Condensed Matter Science)

Amorphous fabrics fluctuate considerably from their crystalline opposite numbers in different ways in which create particular matters of their use. This booklet explores those concerns and their implications, and gives an entire therapy of either experimental and theoretical experiences within the box. Advances in Amorphous Semiconductors covers quite a lot of reviews on hydrogenated amorphous silicon, amorphous chalcogenides, and a few oxide glasses.

Additional resources for Properties of III-V Quantum Wells and Superlattices (E M I S Datareviews Series)

Example text

Lett. 66 (1995) p. 1367-9 ] H. Bohner, S. H. Dohler, A. Forster, H. Liith [ Verh. Dtsch. Phys. Ges. 29 (1994) p. 1165] F. Hirler et al [ Surf. Sci. 536-40 ] A. Huber, H. P. Kotthaus, S. Bakker [Phys. Rev. 5028-32 ] M. Fritze, A. Nurmikko, P. Havvrylak [ Surf. Sci. H. Dohler [ Springer Ser. Solid-State Sci. 87 (1989) p. 174-84 ] M. Forkel et al [ Magnetic tuning of spatially indirect interband transitions in parabolic and rectangular quantum wells in High magnetic fields in the physics of semiconductors Ed.

H. Gulden et al [ Appl. Phys. Lett. 3180-2 ] S. Malzer et al [ accepted for publication in J. Vac. Sci. Technol. E. Ackley, J. Mantz, H. Lee, N. Nouri, C-L. Shieh [Appl. Phys. Lett. W. Yoffe, J. Brubach, F. Karouta, W C . van der Vleuten, LM. Kaufmann, J H . Wolter [Appl. Phys. Lett. 63 (1993) p. 1456 ] S D . Koehler, EM. Garmire, AR. Kost, D. Yap, D P . Docter, T C . Hasenberg [IEEE Photonics Technol, Lett. 878 ] M. H. Dohler [ Phys. Rev. 48 (1993) p. 11220-7 ] K. Schrufer, C Metzner, U. Wieser, M.

The feasibility and usefulness of strained-layered superlattices was first studied by Osbourn [38]. FIGURE 3 displays a variety of valence-band structures available for In1 ^GaxAsZInP quantum wells. InAs-GaSb Superlattice Energy (eV) FIGURE 2 shows the band structures of an InAs/GaSb superlattice obtained by EBOM [H]. InAs/GaSb forms a type-II superlattice, in which the electron and hole are confined in different regions of the superlattice [34]. This property gives rise to long carrier lifetimes and weak inter-band optical absorption [34,35].

Download PDF sample

Rated 4.08 of 5 – based on 23 votes