RF CMOS Power Amplifiers: Theory, Design and Implementation by Mona M. Hella, Mohammed Ismail

By Mona M. Hella, Mohammed Ismail

RF CMOS strength Amplifiers: thought layout and Implementation specializes in the layout process and the trying out problems with CMOS RF energy amplifiers.
this can be the 1st monograph addressing RF CMOS energy amplifier layout for rising instant criteria. the point of interest on strength amplifiers for brief is distance instant own and native region networks (PAN and LAN), but the layout strategies also are acceptable to rising large region networks (WAN) infrastructure utilizing micro or pico cellphone networks. The ebook discusses CMOS strength amplifier layout ideas and thought and describes the architectures and tardeoffs in designing linear and nonlinear energy amplifiers. It then info layout examples of RF CMOS energy amplifiers for brief distance instant functions (e, g., Bluetooth, WLAN) together with designs for multi-standard systems. layout points of RF circuits in deep submicron CMOS also are mentioned.
RF CMOS energy Amplifiers: concept layout and Implementation serves as a reference for RF IC layout engineers and RD and R&D managers in undefined, and for graduate scholars carrying out learn in instant semiconductor IC layout typically and with CMOS expertise specifically.

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Additional info for RF CMOS Power Amplifiers: Theory, Design and Implementation (The Springer International Series in Engineering and Computer Science)

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Having a number of bond wires in parallel, connected to the ground pad, is a way to minimize their values. However, this will increase the number of pads dedicated to ground, and thus increases the overall area of the chip. The previous discussion on Class E power amplifier, together with the exact analysis given in [43], [44] assumes negligible source A 900MHz Class E CMOS PA 41 inductance. 11 shows the effect of a finite source inductance of 1nH on the current, and voltage waveforms. When the switch is ON, the voltage on the drain does not settle at a minimum level, instead it has a much higher value than the ideal case.

Any single-ended design must show a k-factor greater than unity over the widest frequency sweep, extending from the low-frequency bias circuit range all the way up to the frequency at which the gain rolls off to lower than unity. Designing or modifying a circuit to obtain such a response for the k factor typically will involve some sacrifices in the in-band RF performance through the use of resistive elements, which will affect the efficiency of the PA. 8. Power Amplifier Controllability Implementing power amplifiers in CMOS technology is considered a major step towards the realization of a complete transceiver on-chip.

Therefore the complete Doherty amplifier has a high efficiency in the whole power range and especially at the medium output power level compared to classical power amplifier design. 11 shows the block diagram of the EER Linearization scheme as proposed by Khan [37]. As the name "envelope elimination and restoration" implies, the envelope of the RF input is first eliminated by a limiter to generate a constant amplitude signal. At the same time, the magnitude of the input information is extracted by an envelope detector.

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