Semiconductor Device by Val Bradford

By Val Bradford

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Because the etching is performed by ions, which approach the wafer approximately from one direction, this process is highly anisotropic. On the other hand, it tends to display poor selectivity. Reactive-ion etching (RIE) operates under conditions intermediate between sputter and plasma etching (between 10-3 and 10-1 Torr). Deep reactive-ion etching (DRIE) modifies the RIE technique to produce deep, narrow features. 1:1) at 40 °C • Chromium (Cr) • Gold (Au) Plasma etchants Cl2, CCl4, SiCl4, BCl3 "Chrome etch": ceric ammonium nitrate ((NH4)2Ce(NO3)6) + nitric acid (HNO3) Hydrochloric acid (HCl) Aqua regia Molybdenum (Mo) CF4 Organic residues and photoresist Piranha etch: sulfuric acid (H2SO4) + hydrogen peroxide (H2O2) Platinum (Pt) Aqua regia O2 (ashing) • Silicon (Si) Silicon dioxide (SiO2) Nitric acid (HNO3) + hydrofluoric acid (HF) • • Hydrofluoric acid (HF) Buffered oxide etch [BOE]: ammonium fluoride (NH4F) • CF4, SF6, NF3 Cl2, CCl2F2 CF4, SF6, NF3 and hydrofluoric acid (HF) • Silicon nitride (Si3N4) 85% Phosphoric acid (H3PO4) at 180 °C (Requires SiO2 etch mask) Tantalum (Ta) Titanium (Ti) CF4 Hydrofluoric acid (HF) • Titanium nitride (TiN) • • Tungsten (W) CF4, SF6, NF3 • BCl3 Nitric acid (HNO3) + hydrofluoric acid (HF) SC1 Nitric acid (HNO3) + hydrofluoric acid (HF) Hydrogen Peroxide (H2O2) • • CF4 SF6 Plasma ashing In semiconductor manufacturing plasma ashing is the process of removing the photoresist from an etched wafer.

Aluminium) layer during the fabrication of CD and DVD discs. Hard disk surfaces use sputtered CrOx and other sputtered materials. Sputtering is one of the main processes of manufacturing optical waveguides and is another way for making efficient photovoltaic solar cells.

Thermal oxidation Furnaces used for diffusion and thermal oxidation at LAAS technological facility in Toulouse, France. In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal-Grove model. The chemical reaction Thermal oxidation of silicon is usually performed at a temperature between 800 and 1200°C, resulting in so called High Temperature Oxide layer (HTO).

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