Silicon Technologies: Ion Implantation and Thermal Treatment by Annie Baudrant

By Annie Baudrant

The most function of this ebook is to remind new engineers in silicon foundry, the basic actual and chemical ideas in significant entrance finish remedies: oxidation, epitaxy, ion implantation and impurities diffusion.

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Example text

At the same time, the diffusion of isolated defects present in the oxide involves the diffusion in the oxide volume of the 18O atoms of the surface. We postulate the transfer coefficient between gas and silica to be sufficiently high, so that all the atoms of the surface are completely exchanged in a very short time. Movement in all directions If the defects migrate in all directions, according to a simple diffusion process, there is an isotopic exchange, and the total amount of 18O is higher than the quantity fixed by the growth.

5. 4%) contained in organic solvents used for anodic oxidation were the main oxygen source for the oxide growth [CRO 71a]. In the Croset et al. e. H218O). e. approximately 90 nm of oxide thickness. 4% of H216O for voltages from 180 to 300 V (108 to 180 nm). 20 represents the profiles of 18O obtained by SIMS (secondary ion mass spectroscopy) for various phases of the second stage of oxidation. We clearly see that the sequence 18O/16O is preserved, but a mixture 16/18 appears, and a loss of 18 O is highlighted.

For example, the rare gases diffuse without reacting, whereas hydrogen reacts with its diffusive environment for temperatures higher than 500°C. The species that will be examined are those that we generally encounter during oxidation and annealing processes. The diffusion of rare gases helps us to define two important concepts: solubility and diffusivity. 1. Diffusion of rare gases in silica The rare gases (He, Ne, Ar, Xe) diffuse interstitially without reacting with the silica network. 1. Solubility Solubility is the aptitude of a network to dissolve a gas which is immersed there at a given temperature and pressure.

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