Wideband Low Noise Amplifiers Exploiting Thermal Noise by Federico Bruccoleri

By Federico Bruccoleri

Low Noise Amplifiers (LNAs) are frequent to magnify signs which are too susceptible for direct processing for instance in radio or cable receivers. usually, low noise amplifiers are carried out through tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. this may render very low noise yet basically in a comparatively slender frequency band with regards to resonance. there's a transparent development to take advantage of extra bandwidth for verbal exchange, either through cables (e.g. cable television, web) and instant hyperlinks (e.g. satellite tv for pc hyperlinks and extremely Wideband Band). therefore wideband low-noise amplifier recommendations are a great deal needed.

Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation explores options to achieve wideband amplifiers, able to impedance matching and nonetheless reaching a low noise determine good under 3dB. this is often completed with a brand new noise cancelling procedure as defined during this booklet. by utilizing this method, the thermal noise of the enter transistor of the LNA may be cancelled whereas the sought after sign is amplified! The e-book provides a close research of this system and offers numerous new amplifier circuits.

This ebook is without delay suitable for IC designers and researchers engaged on built-in transceivers. even though the point of interest is on CMOS circuits, the suggestions can simply besides be utilized to different IC applied sciences, e.g. bipolar and GaAs, or even in discrete part technologies.

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Extra info for Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation (The Springer International Series in Engineering and Computer Science)

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17b shows IIP2, IIP3 and 1dBCP versus the gain. These are rather close to the simulation results. 7. 17: Measured IIP2 and IIP3 at maximum gain (a) and IIP2, IIP3 and 1dBCP vs. gain (b). 8 Conclusions In this chapter, 2-MOSFET implementations of the wide-band amplifiers generated in chapter 2 were compared. 1) because: x For the same value of the device transconductance ga and gb, A1 provides a larger forward voltage gain compared to A4. Conversely, for the same AVF, CL and ZIN=RS, A1 offers a somewhat larger bandwidth compared to A4.

For a given AVF, amplifier A4 30 Chapter 3: 2-MOST Amplifiers: Analysis and Design requires a smaller “g” and so the output noise is larger. More interesting is the noise behaviour of amplifier A3. 1 and, it is constant as a function of AVF. 3. To understand the reason of such behaviour, the noise factor of amplifier A3 is now analysed in detail. e. e. the quality of the source impedance match). This suggests some kind of noise cancellation. 4: Cancelling of the output noise voltage due to the matching device noise current, In,a.

7] T. H. Lee, “The Design of Radio-Frequency CMOS Integrated Circuits”, Cambridge University Press, 1998. [8] A. 30, pp. 1399-1410, December 1995. [9] A. van der Ziel, “Noise in Solid State Devices and Circuits”, Wiley, New York 1986. [10] H. Packard, “Noise Figure Measurement Accuracy”, Application Note 57-2, Nov. 1988. [11] B. Razavi, “RF Microelectronic”, Prentice Hall, 1998. [12] B. Taddiken, “Broadband Design for Wireless and Wired Systems”, Tutorial, ISSCC 2001, San Francisco, USA. 1 Introduction In chapter 2, all the wide-band two-port amplifiers that can be modelled as circuits with 2 voltage controlled current sources were generated systematically.

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